7 months ago
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Defence Research and Development Organisation (DRDO) has made important strides successful semi-conductor exertion by processing indigenous methods for producing four-inch Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) up to 150 W, informed president and secretary, Department of Defence Research and Development (DDR&D) Samir V. Kamat.
Addressing a gathering connected Friday, organised arsenic a curtain raiser for the upcoming Emerging Science, Technology & Innovation Conclave (ESTIC-2025), helium underlined the cardinal relation of semi-conductors successful modern exertion ecosystems, powering captious systems successful healthcare, communications, transport, defence, and space.
Mr. Kamat highlighted that arsenic planetary economies determination towards deeper digitalisation and automation, semiconductors person go captious to nationalist security, economical progress, and technological sovereignty. Referring to India’s semiconductor journey, the president noted that since the motorboat of the India Semiconductor Mission (ISM) successful 2021, the state has transitioned from imaginativeness to implementation successful conscionable 4 years.
He reaffirmed the nationalist aspiration to presumption India among the world’s apical 3 nations successful semiconductors by 2036 successful the domains of research, innovation, and workforce development.
